Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12540277Application Date: 2009-08-12
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Publication No.: US08399929B2Publication Date: 2013-03-19
- Inventor: Hiroharu Shimizu
- Applicant: Hiroharu Shimizu
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-230628 20080909
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
To provide a technique that can maintain uniformity of semiconductor elements and wirings microfabricated, while maintaining the mounting efficiency of circuit cells onto a chip. Respective gate electrodes of an n-channel type MISFET and another n-channel type MISFET forming a NAND circuit cell are coupled to the same node, and simultaneously perform respective on-off operations according to the same input signal. These n-channel type MISFETs are arranged adjacent to each other, and electrically coupled in series. Respective gate electrodes of a p-channel type MISFET and another p-channel type MISFET forming the NAND circuit cell are coupled to the same node, and simultaneously perform respective on-off operations according to the same input signal. These p-channel type MISFETs are arranged adjacent to each other, and electrically coupled in series.
Public/Granted literature
- US20100059826A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-03-11
Information query
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