Invention Grant
- Patent Title: Fuse part for semiconductor device
- Patent Title (中): 半导体器件保险丝零件
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Application No.: US12829741Application Date: 2010-07-02
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Publication No.: US08399958B2Publication Date: 2013-03-19
- Inventor: Byoung Hwa You
- Applicant: Byoung Hwa You
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0060817 20090703
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A fuse part for a semiconductor device includes an insulation layer configured to cover a conductive pattern over a substrate, a dual fuse configured to include a first pattern and a second pattern that are positioned on the same line over the insulation layer and spaced apart from each other by a certain distance, a protective layer configured to cover the dual fuse and include a first fuse box and a second fuse box that partially expose the first pattern and the second pattern, respectively, and a plurality of plugs configured to penetrate the insulation layer and electrically connect the first and second patterns to the conductive pattern. Herein, the plugs are positioned beneath the first and second fuse boxes.
Public/Granted literature
- US20110001213A1 FUSE PART FOR SEMICONDUCTOR DEVICE Public/Granted day:2011-01-06
Information query
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