Invention Grant
- Patent Title: Microelectronic devices including conductive vias, conductive caps and variable thickness insulating layers
- Patent Title (中): 微电子器件包括导电通孔,导电帽和可变厚度绝缘层
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Application No.: US12951140Application Date: 2010-11-22
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Publication No.: US08399987B2Publication Date: 2013-03-19
- Inventor: Woonseong Kwon , Hyuekjae Lee , Taeje Cho , Yonghwan Kwon , Jung-Hwan Kim , Chiyoung Lee , Taeeun Kim
- Applicant: Woonseong Kwon , Hyuekjae Lee , Taeje Cho , Yonghwan Kwon , Jung-Hwan Kim , Chiyoung Lee , Taeeun Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0119903 20091204; KR10-2010-0059148 20100622
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/30

Abstract:
Microelectronic devices include a conductive via that extends into a substrate face and that also protrudes beyond the substrate face to define a conductive via end surface and a conductive via sidewall that extends from the end surface towards the substrate face. A conductive cap is provided on the end surface, the conductive cap including a conductive cap body that extends across the end surface and a flange that extends from the conductive cap body along the conductive via sidewall towards the substrate face. Related fabrication methods are also described.
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