Invention Grant
- Patent Title: Piezoelectric material, piezoelectric device, and method of producing the piezoelectric device
- Patent Title (中): 压电材料,压电装置以及压电装置的制造方法
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Application No.: US12721131Application Date: 2010-03-10
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Publication No.: US08400047B2Publication Date: 2013-03-19
- Inventor: Makoto Kubota , Kenji Takashima , Masaki Azuma , Yoshitaka Nakamura , Yuichi Shimakawa , Takashi Iijima , Bong-Yeon Lee
- Applicant: Makoto Kubota , Kenji Takashima , Masaki Azuma , Yoshitaka Nakamura , Yuichi Shimakawa , Takashi Iijima , Bong-Yeon Lee
- Applicant Address: JP Tokyo JP Kyoto JP Tokyo
- Assignee: Canon Kabushiki Kaisha,Kyoto University,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Canon Kabushiki Kaisha,Kyoto University,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo JP Kyoto JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-060269 20090312
- Main IPC: H01L41/187
- IPC: H01L41/187

Abstract:
Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3 (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0
Public/Granted literature
- US20100231095A1 PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE Public/Granted day:2010-09-16
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