Invention Grant
- Patent Title: Method and system of testing a semiconductor device
- Patent Title (中): 测试半导体器件的方法和系统
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Application No.: US12431927Application Date: 2009-04-29
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Publication No.: US08400178B2Publication Date: 2013-03-19
- Inventor: Han-Ping Pu , Mill-Jer Wang
- Applicant: Han-Ping Pu , Mill-Jer Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/02
- IPC: G01R31/02
Abstract:
The present disclosure provides a semiconductor device, the device includes a substrate, a front-end structure formed in the substrate, a back-end structure formed on the front-end structure, a heater embedded in the back-end structure and operable to generate heat, and a sensor embedded in the back-end structure and operable to sense a temperature of the semiconductor device.
Public/Granted literature
- US20100278211A1 METHOD AND SYSTEM OF TESTING A SEMICONDUCTOR DEVICE Public/Granted day:2010-11-04
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