Invention Grant
US08400205B2 Apparatus and method for linearizing field effect transistors in the OHMIC region
有权
在OHMIC区域中线性化场效应晶体管的装置和方法
- Patent Title: Apparatus and method for linearizing field effect transistors in the OHMIC region
- Patent Title (中): 在OHMIC区域中线性化场效应晶体管的装置和方法
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Application No.: US13082803Application Date: 2011-04-08
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Publication No.: US08400205B2Publication Date: 2013-03-19
- Inventor: Omid Foroudi
- Applicant: Omid Foroudi
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus includes a field effect transistor with a first series circuit in parallel with the gate and the source of the field effect transistor and a second series circuit in parallel with the gate and the drain of the field effect transistor. Each series circuit can include a capacitor and a switch in series with the capacitor. The switch can be configured to be on when the field effect transistor is on, and to be off when the field effect transistor is off. This can improve the linearity of the field effect transistor as a resistor. In some implementations, the apparatus can further include an isolation resistor having a first end and a second end, the first end electrically coupled to the gate of the field effect transistor.
Public/Granted literature
- US20120256674A1 APPARATUS AND METHOD FOR LINEARIZING FIELD EFFECT TRANSISTORS IN THE OHMIC REGION Public/Granted day:2012-10-11
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