Invention Grant
US08400205B2 Apparatus and method for linearizing field effect transistors in the OHMIC region 有权
在OHMIC区域中线性化场效应晶体管的装置和方法

Apparatus and method for linearizing field effect transistors in the OHMIC region
Abstract:
Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus includes a field effect transistor with a first series circuit in parallel with the gate and the source of the field effect transistor and a second series circuit in parallel with the gate and the drain of the field effect transistor. Each series circuit can include a capacitor and a switch in series with the capacitor. The switch can be configured to be on when the field effect transistor is on, and to be off when the field effect transistor is off. This can improve the linearity of the field effect transistor as a resistor. In some implementations, the apparatus can further include an isolation resistor having a first end and a second end, the first end electrically coupled to the gate of the field effect transistor.
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