Invention Grant
- Patent Title: Complementary band-gap voltage reference circuit
- Patent Title (中): 互补带隙电压参考电路
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Application No.: US13122321Application Date: 2008-11-18
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Publication No.: US08400213B2Publication Date: 2013-03-19
- Inventor: Thierry Sicard
- Applicant: Thierry Sicard
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2008/055646 WO 20081118
- International Announcement: WO2010/058250 WO 20100527
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A complementary band-gap voltage reference circuit comprising first and second groups of transistors, each group containing a first transistor of npn type and a second transistor of pnp type and the transistors of different types in the same group having different emitter current conduction areas. The emitter-collector paths of the first transistors of each group are connected in parallel so as to present differential base-emitter voltages. The second transistors of each group are connected with their emitter-collector paths in parallel with a base-emitter junction of the first transistor of the same group so as to present differential base-emitter voltages of the second transistors across the first and second groups of transistors. The output regulated voltage is an additive function of the differential base-emitter voltages and of additive base-emitter voltages of transistors with smaller emitter current conduction area and different type.
Public/Granted literature
- US20110187445A1 COMPLEMENTARY BAND-GAP VOLTAGE REFERENCE CIRCUIT Public/Granted day:2011-08-04
Information query
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