Invention Grant
US08400213B2 Complementary band-gap voltage reference circuit 有权
互补带隙电压参考电路

  • Patent Title: Complementary band-gap voltage reference circuit
  • Patent Title (中): 互补带隙电压参考电路
  • Application No.: US13122321
    Application Date: 2008-11-18
  • Publication No.: US08400213B2
    Publication Date: 2013-03-19
  • Inventor: Thierry Sicard
  • Applicant: Thierry Sicard
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • International Application: PCT/IB2008/055646 WO 20081118
  • International Announcement: WO2010/058250 WO 20100527
  • Main IPC: G05F1/10
  • IPC: G05F1/10
Complementary band-gap voltage reference circuit
Abstract:
A complementary band-gap voltage reference circuit comprising first and second groups of transistors, each group containing a first transistor of npn type and a second transistor of pnp type and the transistors of different types in the same group having different emitter current conduction areas. The emitter-collector paths of the first transistors of each group are connected in parallel so as to present differential base-emitter voltages. The second transistors of each group are connected with their emitter-collector paths in parallel with a base-emitter junction of the first transistor of the same group so as to present differential base-emitter voltages of the second transistors across the first and second groups of transistors. The output regulated voltage is an additive function of the differential base-emitter voltages and of additive base-emitter voltages of transistors with smaller emitter current conduction area and different type.
Public/Granted literature
Information query
Patent Agency Ranking
0/0