Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12929668Application Date: 2011-02-07
-
Publication No.: US08400805B2Publication Date: 2013-03-19
- Inventor: Hideyuki Yoko
- Applicant: Hideyuki Yoko
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-016004 20110128
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C7/00 ; G11C8/00

Abstract:
A semiconductor device according to the present invention includes plural controlled chips CC0 to CC7 that hold mutually different layer information, and a control chip IF that supplies in common layer address signals A13 to A15 and a command signal ICMD to the controlled chips. Each bit that constitutes the layer address signals A13 to A15 is transmitted via at least two through silicon vias that are connected in parallel for each controlled chip out of plural first through silicon vias. Each bit that constitutes the command signal ICMD is transmitted via one corresponding through silicon via that is selected by an output switching circuit and an input switching circuit. With this configuration, the layer address signals A13 to A15 reach the controlled chips earlier than the command signal ICMD.
Public/Granted literature
- US20120195136A1 Semiconductor device Public/Granted day:2012-08-02
Information query