Invention Grant
US08400822B2 Multi-port non-volatile memory that includes a resistive memory element
有权
包括电阻式存储器元件的多端口非易失性存储器
- Patent Title: Multi-port non-volatile memory that includes a resistive memory element
- Patent Title (中): 包括电阻式存储器元件的多端口非易失性存储器
-
Application No.: US12728337Application Date: 2010-03-22
-
Publication No.: US08400822B2Publication Date: 2013-03-19
- Inventor: Hari M. Rao , Jung Pill Kim
- Applicant: Hari M. Rao , Jung Pill Kim
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A system and method to access a multi-port non-volatile memory that includes a resistive memory element is disclosed. In a particular embodiment, a multi-port non-volatile memory device is disclosed that includes a resistive memory cell and multiple ports coupled to the resistive memory cell.
Public/Granted literature
- US20110228594A1 Multi-Port Non-Volatile Memory that Includes a Resistive Memory Element Public/Granted day:2011-09-22
Information query
