Invention Grant
- Patent Title: Semiconductor memory device and method of operating the same
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US12982746Application Date: 2010-12-30
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Publication No.: US08400829B2Publication Date: 2013-03-19
- Inventor: Gyo Soo Chu
- Applicant: Gyo Soo Chu
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0135641 20091231
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A semiconductor memory device includes memory blocks each comprising a plurality of memory cells formed over a semiconductor substrate having a P well, a first voltage generator supplying operating voltages to an selected block of the memory blocks, and a second voltage generator generating a negative voltage to the P well during a program operation.
Public/Granted literature
- US20110157988A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2011-06-30
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