Invention Grant
- Patent Title: Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device
- Patent Title (中): 半导体发光元件,半导体发光元件的驱动方法,发光元件以及使用发光元件的光脉冲测试器
-
Application No.: US13151597Application Date: 2011-06-02
-
Publication No.: US08401044B2Publication Date: 2013-03-19
- Inventor: Shintaro Morimoto , Hiroshi Mori , Yasuaki Nagashima
- Applicant: Shintaro Morimoto , Hiroshi Mori , Yasuaki Nagashima
- Applicant Address: JP Atsugi-shi
- Assignee: Anritsu Corporation
- Current Assignee: Anritsu Corporation
- Current Assignee Address: JP Atsugi-shi
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2010-182234 20100817
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S3/13

Abstract:
[Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device.[Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13a with a gain wavelength λ1 of about 1.55 μm and an active layer 13b with a gain wavelength λ2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ1 and λ2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ2 is formed near the active layer 13b with the short gain wavelength λ2 and near a butt-joint coupling portion 19 between the active layers 13a and 13b, an upper electrode provided above the active layer 13b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13b when a driving current is applied to the active layer 13a.
Public/Granted literature
Information query