Invention Grant
US08402407B2 Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method
有权
半导体集成电路图案验证方法,光掩模制造方法,半导体集成电路器件制造方法以及用于实现半导体集成电路图案验证方法的程序
- Patent Title: Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method
- Patent Title (中): 半导体集成电路图案验证方法,光掩模制造方法,半导体集成电路器件制造方法以及用于实现半导体集成电路图案验证方法的程序
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Application No.: US13010130Application Date: 2011-01-20
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Publication No.: US08402407B2Publication Date: 2013-03-19
- Inventor: Shigeki Nojima
- Applicant: Shigeki Nojima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-203439 20040709
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A semiconductor integrated circuit pattern verification method includes executing simulation to obtain a simulation pattern to be formed on a substrate on the basis of a semiconductor integrated circuit design pattern, comparing the simulation pattern and the design pattern that is required on the substrate to detect a first difference value, extracting error candidates at which the first difference value is not less than a first predetermined value, comparing pattern shapes at the error candidates to detect a second difference value, combining, into one group, patterns whose second difference values are not more than a second predetermined value, and extracting a predetermined number of patterns from each group and verifying error candidates of the extracted patterns.
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