Invention Grant
- Patent Title: Localized jet soldering device and partial jet soldering method
- Patent Title (中): 本地喷射焊接装置和部分喷射焊接方法
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Application No.: US13257936Application Date: 2010-03-24
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Publication No.: US08403199B2Publication Date: 2013-03-26
- Inventor: Issaku Sato , Akira Takaguchi
- Applicant: Issaku Sato , Akira Takaguchi
- Applicant Address: JP Tokyo
- Assignee: Senju Metal Industry Co., Ltd.
- Current Assignee: Senju Metal Industry Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Chernoff Vilhauer McClung & Stenzel LLP
- Priority: JP2009-072724 20090324
- International Application: PCT/JP2010/055125 WO 20100324
- International Announcement: WO2010/110341 WO 20100930
- Main IPC: B23K3/06
- IPC: B23K3/06 ; B23K31/02

Abstract:
To enable the molten solder to be partially spouted onto a component-mounting member in a stable state without decreasing the revolutions of a pump which is difficult to set a spouted amount of molten solder, even if a nozzle having a small spouting opening is used in a partial-jet-solder bath.As shown in FIG. 3, an automatic partial-jet-soldering apparatus 100 is provided with a solder bath 4 that has a nozzle base portion 44 and contains molten solder 7, a pump 5 that supplies the molten solder 7 contained in the solder bath 4 under a predetermined pressure to the nozzle base portion 44, plural nozzles 8a and the like that have predetermined solder-spouting areas and connect the nozzle base portion 44 to spout the molten solder 7 supplied from the pump 5 under the predetermined pressure so that it rises by its surface tension, and a dummy nozzle 32 that has a solder-spouting area more than that of any of the nozzles 8a and the like and connects the nozzle base portion 44 to spout the molten solder 7 supplied from the pump 5 under the predetermined pressure, wherein the dummy nozzle 32 is positioned on a position which is nearer the pump 5 than the nozzles 8a and the like.
Public/Granted literature
- US20120006886A1 LOCALIZED JET SOLDERING DEVICE AND PARTIAL JET SOLDERING METHOD Public/Granted day:2012-01-12
Information query
IPC分类: