Invention Grant
- Patent Title: Two-terminal semiconductor sensor device
- Patent Title (中): 两端半导体传感器装置
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Application No.: US12546340Application Date: 2009-08-24
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Publication No.: US08403559B2Publication Date: 2013-03-26
- Inventor: Ryoichi Anzai
- Applicant: Ryoichi Anzai
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2008-222098 20080829; JP2009-039343 20090223
- Main IPC: G01K7/01
- IPC: G01K7/01

Abstract:
Provided is a two-terminal semiconductor sensor device with which an external device having low circuit or element accuracy may be used. An output voltage (VOUT) of the two-terminal semiconductor sensor device based on temperature is not based on a constant current of a constant current source (70) of the external device and a current of an output transistor (60) of the two-terminal semiconductor sensor device, but on a resistance ratio of a voltage dividing circuit including a resistor (30) and a resistor (40), and a temperature voltage (Vbe) of the two-terminal semiconductor sensor device. Accordingly, accuracy of the constant current of the constant current source (70) of the external device that receives the output voltage (VOUT) does not need to be high. Therefore, the external device does not need to have a highly accurate circuit or element for receiving the output voltage (VOUT).
Public/Granted literature
- US20100054302A1 TWO-TERMINAL SEMICONDUCTOR SENSOR DEVICE Public/Granted day:2010-03-04
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