Invention Grant
- Patent Title: Epitaxial barrel susceptor having improved thickness uniformity
- Patent Title (中): 具有改善的厚度均匀性的外延筒基座
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Application No.: US11965521Application Date: 2007-12-27
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Publication No.: US08404049B2Publication Date: 2013-03-26
- Inventor: Lance G. Hellwig , Srikanth Kommu , John A. Pitney
- Applicant: Lance G. Hellwig , Srikanth Kommu , John A. Pitney
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face.
Public/Granted literature
- US20090165719A1 EPITAXIAL BARREL SUSCEPTOR HAVING IMPROVED THICKNESS UNIFORMITY Public/Granted day:2009-07-02
Information query
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