Invention Grant
- Patent Title: Sputtering method
- Patent Title (中): 溅射法
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Application No.: US12989438Application Date: 2009-05-20
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Publication No.: US08404089B2Publication Date: 2013-03-26
- Inventor: Yoshikuni Horishita , Shinobu Matsubara
- Applicant: Yoshikuni Horishita , Shinobu Matsubara
- Applicant Address: JP Kanagawa
- Assignee: ULVAC, Inc.
- Current Assignee: ULVAC, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Cermak Nakajima LLP
- Agent Tomoko Nakajima
- Priority: JP2008-137089 20080526
- International Application: PCT/JP2009/059275 WO 20090520
- International Announcement: WO2009/145093 WO 20091203
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
When sputtering method is performed by disposing a plurality of targets in parallel with each other, and by charging power to the targets through a plurality of bipolar pulsed power supplies, power can be charged with higher accuracy to the targets while being subject to less effect by the switching noises by a simple control. In a sputtering method in which, for each of targets making a pair, power is supplied in a bipolar pulsed mode by switching ON or OFF of each of the switching elements SW1 through SW4 in a bridge circuit that is connected to positive and negative DC output ends from the DC power supply source, and in which each of the targets is sputtered, switching ON or OFF of the switching elements is performed in a short-circuited state of an output-short-circuiting switching element SW0 which is disposed between positive and negative DC outputs from the DC power supply source. The timing of shifting the output-short-circuiting switching element is mutually deviated from bridge circuit to bridge circuit.
Public/Granted literature
- US20110036707A1 SPUTTERING METHOD Public/Granted day:2011-02-17
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