Invention Grant
- Patent Title: Manufacturing process of electrode
- Patent Title (中): 电极制造工艺
-
Application No.: US12408865Application Date: 2009-03-23
-
Publication No.: US08404126B2Publication Date: 2013-03-26
- Inventor: Nobuo Ando , Mitsuru Nagai
- Applicant: Nobuo Ando , Mitsuru Nagai
- Applicant Address: JP Tokyo
- Assignee: Fuji Jukogyo Kabushiki Kaisha
- Current Assignee: Fuji Jukogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-081413 20080326
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H01G9/00 ; B01J13/00

Abstract:
A resist layer is formed over one surface of a current-collector material, while a resist layer having a predetermined pattern is formed on the other surface of the current-collector material. Through-holes are formed on the current-collector material through an etching process. An electrode slurry is applied onto the current-collector material formed with the through-holes without removing the resist layers. Specifically, since the through-holes are closed by the resist layer, the electrode slurry does not pass through the through-holes to leak out. Therefore, the current-collector material can be conveyed in the horizontal direction, whereby the productivity of an electrode can be enhanced. The resist layers are made of PVdF, and the resist layers are removed in a heating and drying step in which the PVdF is dissolved.
Public/Granted literature
- US20090242507A1 MANUFACTURING PROCESS OF ELECTRODE Public/Granted day:2009-10-01
Information query