Invention Grant
US08404205B2 Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
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通过形成磷 - 硼化合物来生产具有减少量的硼化合物的多晶硅的装置和方法
- Patent Title: Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds
- Patent Title (中): 通过形成磷 - 硼化合物来生产具有减少量的硼化合物的多晶硅的装置和方法
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Application No.: US12986794Application Date: 2011-01-07
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Publication No.: US08404205B2Publication Date: 2013-03-26
- Inventor: Laura Prine , Richard M. Halstead , Michael W. Keevan
- Applicant: Laura Prine , Richard M. Halstead , Michael W. Keevan
- Applicant Address: US AL Theodore JP Tokyo
- Assignee: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA),Mitsubishi Materials Corporation (MMC)
- Current Assignee: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA),Mitsubishi Materials Corporation (MMC)
- Current Assignee Address: US AL Theodore JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Main IPC: C01B33/03
- IPC: C01B33/03 ; C01B33/035
Abstract:
The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
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