Invention Grant
- Patent Title: Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls
- Patent Title (中): 用于生产多晶硅的方法，其减少硅在反应器壁上的沉积
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Application No.: US13163027Application Date: 2011-06-17
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Publication No.: US08404206B2Publication Date: 2013-03-26
- Inventor: Milind S. Kulkarni , Puneet Gupta , Balaji Devulapalli , Jameel Ibrahim , Vithal Revankar , Kwasi Foli
- Applicant: Milind S. Kulkarni , Puneet Gupta , Balaji Devulapalli , Jameel Ibrahim , Vithal Revankar , Kwasi Foli
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: C01B33/027
- IPC: C01B33/027 ; C01B33/029 ; C01B33/03
Abstract:
Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.
Public/Granted literature
- US20110244124A1 METHODS FOR PRODUCING POLYCRYSTALLINE SILICON THAT REDUCE THE DEPOSITION OF SILICON ON REACTOR WALLS Public/Granted day:2011-10-06
Information query
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