Invention Grant
US08404433B2 Method for forming resist pattern and method for manufacturing semiconductor device 失效
用于形成抗蚀剂图案的方法和用于制造半导体器件的方法

Method for forming resist pattern and method for manufacturing semiconductor device
Abstract:
In order to suppress variation of a resist pattern size caused by a temperature unevenness at a prebaking process, applying a resist of a positive type or a negative type on a base substrate, prebaking, exposing, post-exposure baking, and forming the resist to be a predetermined shape by developing the resist are carried out. The prebaking is carried out at a temperature equal to or more than a detachment starting temperature of a protective group of a base resin included in the resist in a case where the resist is the positive type. In a case where the resist is the negative type, the prebaking is carried out at a temperature equal to or more than a cross-linking starting temperature of a cross-linker in a base resin included in the resist.
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