Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12946131Application Date: 2010-11-15
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Publication No.: US08404497B2Publication Date: 2013-03-26
- Inventor: Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
- Applicant: Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2009-280469 20091210
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.
Public/Granted literature
- US20110140105A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-16
Information query
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