Invention Grant
- Patent Title: Method of inspecting semiconductor thin film by transmission imaging and inspection device for the same
- Patent Title (中): 通过透射成像和检测装置检测半导体薄膜的方法
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Application No.: US12537299Application Date: 2009-08-07
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Publication No.: US08404498B2Publication Date: 2013-03-26
- Inventor: Hirohisa Amago , Nobuhiko Umezu
- Applicant: Hirohisa Amago , Nobuhiko Umezu
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-211734 20070815; JP2008-208818 20080814
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A method of forming a semiconductor thin film includes: a step of forming an amorphous semiconductor thin film over a transparent substrate; a step of forming a crystalline semiconductor thin film by irradiating the amorphous semiconductor thin film with laser light to provide heat treatment and thereby crystallizing the amorphous semiconductor thin film; and an inspection step of inspecting the crystalline semiconductor thin film. The inspection step includes a step of obtaining a transmission image of the crystalline semiconductor thin film by irradiating the crystalline semiconductor thin film with light from a rear side of the transparent substrate and taking an image, and a screening step of performing screening of the crystalline semiconductor thin film based on the obtained transmission image.
Public/Granted literature
- US20090298208A1 METHOD OF FORMING SEMICONDUCTOR THIN FILM AND INSPECTION DEVICE OF SEMICONDUCTOR THIN FILM Public/Granted day:2009-12-03
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