Invention Grant
- Patent Title: Method for forming a CMOS image sensing pixel
- Patent Title (中): 用于形成CMOS图像感测像素的方法
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Application No.: US12953414Application Date: 2010-11-23
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Publication No.: US08404510B2Publication Date: 2013-03-26
- Inventor: Hong Zhu , Jim Yang
- Applicant: Hong Zhu , Jim Yang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN200710094550 20071213
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for forming a CMOS image sensing pixel, which is configured to determine a color, includes providing an n-type substrate that includes a first thickness and a first width. The method also includes forming a p-type layer, the p-type layer overlaying the n-type substrate. The p-type layer includes a second thickness and a second width. The second thickness and the second width are associated with a light characteristic. The method additionally includes forming an n-type layer, the n-type layer overlaying the p-type layer. The n-type layer includes a third thickness and a third width. In addition, the method includes forming a pn junction between the p-type layer and the n-type layer. The pn junction includes a fourth width. The method also includes providing a control circuit. The control circuit is electrically coupled to the n-type substrate.
Public/Granted literature
- US20110070677A1 SYSTEM AND METHOD FOR CMOS IMAGE SENSING Public/Granted day:2011-03-24
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