Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13485729Application Date: 2012-05-31
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Publication No.: US08404517B2Publication Date: 2013-03-26
- Inventor: Kenji Sakata , Tsuyoshi Kida
- Applicant: Kenji Sakata , Tsuyoshi Kida
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-80212 20090327
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacturing a semiconductor device, includes mounting a semiconductor chip on a wiring substrate such that one surface of the semiconductor chip is faced to one surface of the wiring substrate, and filling a first resin in a gap between the surface of the wiring substrate and the surface of the semiconductor chip such that part of the first resin protrudes from the gap. In the filling of the first resin, the first resin is injected into the gap by use of a first resin injection nozzle while the first resin injection nozzle is being moved along any one of sides of the semiconductor chip or along two sides of the semiconductor chip which are adjacent to each other.
Public/Granted literature
- US20120238060A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-20
Information query
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