Invention Grant
US08404523B2 Method for fabricating stacked semiconductor system with encapsulated through wire interconnects (TWI) 有权
用于封装通过导线互连(TWI)制造堆叠半导体系统的方法

  • Patent Title: Method for fabricating stacked semiconductor system with encapsulated through wire interconnects (TWI)
  • Patent Title (中): 用于封装通过导线互连(TWI)制造堆叠半导体系统的方法
  • Application No.: US13534038
    Application Date: 2012-06-27
  • Publication No.: US08404523B2
    Publication Date: 2013-03-26
  • Inventor: David R. HembreeAlan G. Wood
  • Applicant: David R. HembreeAlan G. Wood
  • Applicant Address: US ID Boise
  • Assignee: Micron Technoloy, Inc.
  • Current Assignee: Micron Technoloy, Inc.
  • Current Assignee Address: US ID Boise
  • Agent Stephen A. Gratton
  • Main IPC: H01L23/04
  • IPC: H01L23/04
Method for fabricating stacked semiconductor system with encapsulated through wire interconnects (TWI)
Abstract:
A method for fabricating a stacked semiconductor system with encapsulated through wire interconnects includes providing a substrate having a first side, a second side and a substrate contact; forming a via in the substrate contact and the substrate to the second side; placing a wire in the via; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side leaving the first contact exposed. The method also includes stacking two or more substrates and electrically connecting the through wire interconnects on the substrates.
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