Invention Grant
US08404549B2 Fabricating method of mirror bit memory device having split ONO film with top oxide film formed by oxidation process
有权
具有通过氧化处理形成的具有顶部氧化膜的分离ONO膜的镜头位存储器件的制造方法
- Patent Title: Fabricating method of mirror bit memory device having split ONO film with top oxide film formed by oxidation process
- Patent Title (中): 具有通过氧化处理形成的具有顶部氧化膜的分离ONO膜的镜头位存储器件的制造方法
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Application No.: US12266512Application Date: 2008-11-06
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Publication No.: US08404549B2Publication Date: 2013-03-26
- Inventor: Masahiko Higashi
- Applicant: Masahiko Higashi
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Frommer Lawrence & Haug LLP
- Agent Matthew M. Gaffney
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A device and method employing a polyoxide-based charge trapping component. A charge trapping component is patterned by etching a layered stack that includes a tunneling layer positioned on a substrate, a charge trapping layer positioned on the tunneling layer, and an amorphous silicon layer positioned on the charge trapping layer. An oxidation process grows a gate oxide layer from the substrate and converts the amorphous silicon layer into a polyoxide layer.
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