Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12715668Application Date: 2010-03-02
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Publication No.: US08404567B2Publication Date: 2013-03-26
- Inventor: Yusuke Dohmae
- Applicant: Yusuke Dohmae
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-051559 20090305
- Main IPC: H01L21/46
- IPC: H01L21/46
Abstract:
A manufacturing method of a semiconductor device, includes: forming grooves from a first surface side of a semiconductor wafer; separating plural chip areas into pieces by grinding a second surface of the semiconductor wafer after a protection sheet is attached to the first surface of the semiconductor wafer; attaching a laminated film in which a dicing film and an adhesive film are sequentially laminated on a supporting film composed of a resin film with high modulus of elasticity to the second surface of the semiconductor wafer; and cutting the adhesive film.
Public/Granted literature
- US20100227454A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-09-09
Information query
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