Invention Grant
- Patent Title: Plasma processing method and apparatus
- Patent Title (中): 等离子体处理方法和装置
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Application No.: US13611939Application Date: 2012-09-12
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Publication No.: US08404573B2Publication Date: 2013-03-26
- Inventor: Tomohiro Okumura , Yuichiro Sasaki , Satoshi Maeshima , Ichiro Nakayama , Bunji Mizuno
- Applicant: Tomohiro Okumura , Yuichiro Sasaki , Satoshi Maeshima , Ichiro Nakayama , Bunji Mizuno
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2003-315414 20030908
- Main IPC: H01L21/223
- IPC: H01L21/223

Abstract:
With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
Public/Granted literature
- US20130022759A1 PLASMA PROCESSING METHOD AND APPARATUS Public/Granted day:2013-01-24
Information query
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