Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13098735Application Date: 2011-05-02
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Publication No.: US08404584B2Publication Date: 2013-03-26
- Inventor: Tadahiro Imada , Kouta Yoshikawa
- Applicant: Tadahiro Imada , Kouta Yoshikawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
The method of manufacturing the semiconductor device includes forming an insulating film above a semiconductor substrate, forming an opening in the insulating film, forming a conductive film above the insulating film with the opening formed, removing the conductive film above the insulating film to bury the conductive film in the opening, and processing a surface of the insulating film with a silicon compound including Si—N or Si—Cl.
Public/Granted literature
- US20110207319A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
Information query
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