Invention Grant
- Patent Title: Manufacturing method for semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11635044Application Date: 2006-12-07
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Publication No.: US08404586B2Publication Date: 2013-03-26
- Inventor: Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
- Applicant: Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
- Applicant Address: JP Kyoto JP Osaka JP Tokyo
- Assignee: Rohm Co., Ltd.,Sanyo Electric Co., Ltd.,Renesas Technology Corp.
- Current Assignee: Rohm Co., Ltd.,Sanyo Electric Co., Ltd.,Renesas Technology Corp.
- Current Assignee Address: JP Kyoto JP Osaka JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2004-087474 20040324
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.
Public/Granted literature
- US20070080457A1 Manufacturing method for semiconductor device, semiconductor device and semiconductor chip Public/Granted day:2007-04-12
Information query
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