Invention Grant
- Patent Title: Method for forming fine pitch structures
- Patent Title (中): 形成细间距结构的方法
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Application No.: US12140928Application Date: 2008-06-17
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Publication No.: US08404600B2Publication Date: 2013-03-26
- Inventor: Gurtej Sandhu
- Applicant: Gurtej Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C03C15/00

Abstract:
A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open and an opposite end has a sidewall that acts as a seed sidewall. A first material is deposited on the seed sidewall. A second material is deposited on the deposited first material. The deposition of the first and second materials is alternated, thereby forming alternating rows of the first and second materials in the interior volume. The mold and seed layer are subsequently selectively removed. In addition, one of the first or second materials is selectively removed, thereby forming a pattern including free-standing rows of the remaining material. The free-standing rows can be utilized as structures in a final product, e.g., an integrated circuit, or can be used as hard mask structures to pattern an underlying substrate. The mold and rows of material can be formed on multiple levels. The rows on different levels can crisscross one another. Selectively removing material from some of the rows can from openings to form, e.g., contact vias.
Public/Granted literature
- US20090311867A1 METHOD FOR FORMING FINE PITCH STRUCTURES Public/Granted day:2009-12-17
Information query
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