Invention Grant
- Patent Title: Plasma oxidation method and plasma oxidation apparatus
- Patent Title (中): 等离子体氧化法和等离子体氧化装置
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Application No.: US13085215Application Date: 2011-04-12
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Publication No.: US08404602B2Publication Date: 2013-03-26
- Inventor: Shuji Takahashi , Haruo Shindo
- Applicant: Shuji Takahashi , Haruo Shindo
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: FUJIFILM Corporation,Tokai University Educational System
- Current Assignee: FUJIFILM Corporation,Tokai University Educational System
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2010-092291 20100413
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin
Public/Granted literature
- US20110250763A1 PLASMA OXIDATION METHOD AND PLASMA OXIDATION APPARATUS Public/Granted day:2011-10-13
Information query
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