Invention Grant
US08405037B2 Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus
有权
辐射检测器制造方法,放射线检测器和放射线照相设备
- Patent Title: Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus
- Patent Title (中): 辐射检测器制造方法,放射线检测器和放射线照相设备
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Application No.: US12867229Application Date: 2008-02-12
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Publication No.: US08405037B2Publication Date: 2013-03-26
- Inventor: Satoshi Tokuda , Hiroyuki Kishihara , Masatomo Kaino , Tamotsu Okamoto
- Applicant: Satoshi Tokuda , Hiroyuki Kishihara , Masatomo Kaino , Tamotsu Okamoto
- Applicant Address: JP Kyoto JP Tokyo
- Assignee: Shimadzu Corporation,Institute of National Colleges of Technology, Japan
- Current Assignee: Shimadzu Corporation,Institute of National Colleges of Technology, Japan
- Current Assignee Address: JP Kyoto JP Tokyo
- Agency: Cheng Law Group, PLLC
- International Application: PCT/JP2008/052250 WO 20080212
- International Announcement: WO2009/101670 WO 20090820
- Main IPC: G01T1/20
- IPC: G01T1/20

Abstract:
A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.
Public/Granted literature
- US20100327172A1 RADIATION DETECTOR MANUFACTURING METHOD, A RADIATION DETECTOR, AND A RADIOGRAPHIC APPARATUS Public/Granted day:2010-12-30
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