Invention Grant
- Patent Title: Organic thin film transistor with a protective layer between source and drain electrodes and electronic device
- Patent Title (中): 有机薄膜晶体管，在源极和漏极之间具有保护层和电子器件
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Application No.: US13029383Application Date: 2011-02-17
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Publication No.: US08405073B2Publication Date: 2013-03-26
- Inventor: Hideki Ono , Akihiro Nomoto , Iwao Yagi
- Applicant: Hideki Ono , Akihiro Nomoto , Iwao Yagi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2010-050481 20100308
- Main IPC: H01L51/10
- IPC: H01L51/10
Abstract:
A thin film transistor capable of stably obtaining good performance is provided. The thin film transistor includes an organic semiconductor layer, and a protective layer and a source electrode and a drain electrode formed on the organic semiconductor layer. The protective layer is disposed at least in a region between the source electrode and the drain electrode.
Public/Granted literature
- US20110215406A1 THIN FILM TRANSISTOR AND ELECTRONIC DEVICE Public/Granted day:2011-09-08
Information query
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