Invention Grant
- Patent Title: Transistor substrate and manufacturing method of the same
- Patent Title (中): 晶体管基板及其制造方法相同
-
Application No.: US13042888Application Date: 2011-03-08
-
Publication No.: US08405080B2Publication Date: 2013-03-26
- Inventor: Yong-Hwan Park
- Applicant: Yong-Hwan Park
- Applicant Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2010-0024757 20100319
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
A transistor substrate and a method of manufacturing the transistor substrate. The transistor substrate includes a semiconductor layer arranged on a base layer, a first layer arranged on the semiconductor layer and having a first light transmissivity, source and drain electrodes, the source electrode arranged on a first side of the semiconductor layer and extending onto a first portion of the first layer, the drain electrode arranged on a second and opposite side of the semiconductor layer and extending onto a second portion of the first layer and separated from the source electrode by a distance, a second layer arranged between the first layer and the source and drain electrodes and having a second light transmissivity that is lower than the first light transmissivity, a gate insulating layer arranged on the first layer and a gate electrode arranged on the gate insulating layer.
Public/Granted literature
- US20110227073A1 TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-09-22
Information query
IPC分类:
