Invention Grant
- Patent Title: Split-gate ESD diodes with elevated voltage tolerance
- Patent Title (中): 分压门ESD二极管具有较高的电压容差
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Application No.: US12290083Application Date: 2008-10-27
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Publication No.: US08405123B2Publication Date: 2013-03-26
- Inventor: Vladislav Vashchenko , Konstantin G. Korablev
- Applicant: Vladislav Vashchenko , Konstantin G. Korablev
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/70
- IPC: H01L29/70 ; H01L21/28
Abstract:
In a gated diode ESD protection structure, the gate is split into two parts to divide the total reverse voltage between two gate regions.
Public/Granted literature
- US20100102391A1 Split-gate ESD diodes with elevated voltage tolerance Public/Granted day:2010-04-29
Information query
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