According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, an insulating film, a non-doped semiconductor film, a semiconductor pillar, a charge storage film, a contact, and a spacer insulating film. The stacked body is provided on the substrate. The stacked body includes a plurality of doped semiconductor films stacked. The insulating film is provided between the doped semiconductor films in a first region. The non-doped semiconductor film is provided between the doped semiconductor films in a second region. The semiconductor pillar pierces the stacked body in a stacking direction of the stacked body in the first region. The charge storage film is provided between the doped semiconductor film and the semiconductor pillar. The contact pierces the stacked body in the stacking direction in the second region. The spacer insulating film is provided around the contact.