Invention Grant
US08405146B2 Component arrangement including a MOS transistor having a field electrode
有权
元件布置包括具有场电极的MOS晶体管
- Patent Title: Component arrangement including a MOS transistor having a field electrode
- Patent Title (中): 元件布置包括具有场电极的MOS晶体管
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Application No.: US12773580Application Date: 2010-05-04
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Publication No.: US08405146B2Publication Date: 2013-03-26
- Inventor: Armin Willmeroth , Franz Hirler
- Applicant: Armin Willmeroth , Franz Hirler
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102007004323 20070129
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
Public/Granted literature
- US20100213506A1 COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE Public/Granted day:2010-08-26
Information query
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