Invention Grant
- Patent Title: Contoured insulator layer of silicon-on-insulator wafers and process of manufacture
- Patent Title (中): 硅绝缘体硅片的轮廓绝缘体层及其制造工艺
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Application No.: US12987232Application Date: 2011-01-10
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Publication No.: US08405150B2Publication Date: 2013-03-26
- Inventor: Levent Gulari
- Applicant: Levent Gulari
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph Petrokaitis; Matthew C. Zehrer
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A silicon-on-insulator wafer. The SOI wafer comprises a top silicon layer, a silicon substrate, and an oxide insulator layer disposed across the wafer and between the silicon substrate and the top silicon layer. The oxide insulator layer has at least one of a contoured top surface and a contoured bottom surface. Also provided are processes for manufacturing such a SOI wafer.
Public/Granted literature
- US20110101490A1 CONTOURED INSULATOR LAYER OF SILICON-ON-INSULATOR WAFERS AND PROCESS OF MANUFACTURE Public/Granted day:2011-05-05
Information query
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