Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
-
Application No.: US12760086Application Date: 2010-04-14
-
Publication No.: US08405183B2Publication Date: 2013-03-26
- Inventor: Alain Straboni
- Applicant: Alain Straboni
- Applicant Address: FR Poitiers
- Assignee: S'Tile Pole des Eco-Industries
- Current Assignee: S'Tile Pole des Eco-Industries
- Current Assignee Address: FR Poitiers
- Agency: Howard IP Law Group, P.C.
- Priority: FR0304676 20030414
- Main IPC: H01L31/102
- IPC: H01L31/102
Abstract:
An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.
Public/Granted literature
- US20100258172A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2010-10-14
Information query
IPC分类:
