Invention Grant
- Patent Title: MEMS packaging scheme using dielectric fence
- Patent Title (中): 采用介质栅的MEMS封装方案
-
Application No.: US12651340Application Date: 2009-12-31
-
Publication No.: US08405202B2Publication Date: 2013-03-26
- Inventor: Venkatesh Mohanakrishnaswamy , Loi N. Nguyen , Venkata Ramana Yogi Mallela
- Applicant: Venkatesh Mohanakrishnaswamy , Loi N. Nguyen , Venkata Ramana Yogi Mallela
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L23/12
- IPC: H01L23/12
Abstract:
A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.
Public/Granted literature
- US20110042801A1 MEMS PACKAGING SCHEME USING DIELECTRIC FENCE Public/Granted day:2011-02-24
Information query
IPC分类:
