Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13067607Application Date: 2011-06-14
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Publication No.: US08405205B2Publication Date: 2013-03-26
- Inventor: Kiyoshi Takahashi , Souichi Okita
- Applicant: Kiyoshi Takahashi , Souichi Okita
- Applicant Address: JP Kawasaki-Shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2010-139731 20100618
- Main IPC: H01L29/739
- IPC: H01L29/739

Abstract:
A power semiconductor module includes a plurality of sets of semiconductor switching elements, a molded resin casing containing the semiconductor switching elements, screw holders for receiving mounting screws formed at bottom regions of four corners of the molded resin casing, first terminal blocks having main circuit terminals, and arranged on a central region of a top surface of the molded resin casing, and second terminal blocks having control terminals arranged at a side edge of the molded resin casing apart. Insulating separation walls having a configuration of a rib erect from a surface of the second terminal blocks, and are interposed between groups of the control terminals corresponding to the sets of semiconductor switching elements, and between the screw holder including the mounting screw therein on the molded resin casing and the control terminal at a high voltage side adjacent to the screw holder.
Public/Granted literature
- US20120001227A1 Power semiconductor module Public/Granted day:2012-01-05
Information query
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