Invention Grant
- Patent Title: Integrated circuit system with via and method of manufacture thereof
- Patent Title (中): 集成电路系统及其制造方法
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Application No.: US12825266Application Date: 2010-06-28
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Publication No.: US08405222B2Publication Date: 2013-03-26
- Inventor: Hong Yu , Huang Liu , Feng Zhao , Meisheng Zhou , Liang-Choo Hsia
- Applicant: Hong Yu , Huang Liu , Feng Zhao , Meisheng Zhou , Liang-Choo Hsia
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Ishimaru & Associates LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacture of an integrated circuit system includes: forming an etch stop layer over a bulk substrate; forming a buffer layer on the etch stop layer; forming a hard mask on the buffer layer; forming a through silicon via through the etch stop layer with the hard mask detected and the buffer layer removed with a low down force; and forming a passivation layer on the through silicon via and the etch stop layer.
Public/Granted literature
- US20110316166A1 INTEGRATED CIRCUIT SYSTEM WITH VIA AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2011-12-29
Information query
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