Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13098752Application Date: 2011-05-02
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Publication No.: US08405428B2Publication Date: 2013-03-26
- Inventor: Ryo Fukuda , Masaru Koyanagi
- Applicant: Ryo Fukuda , Masaru Koyanagi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-134823 20100614
- Main IPC: H03K5/153
- IPC: H03K5/153

Abstract:
A constant current source circuit includes one end connected to a second node as sources of third and fourth transistors, and the other end connected to a second power supply node that supplies a second voltage different from a first voltage. The clamp circuit is configured to form a current path between the second node and the second power supply node. It adjusts the potential of the second node to a certain potential when a first external input signal is switched from a first state to a second state.
Public/Granted literature
- US20110304377A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-12-15
Information query
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