Invention Grant
- Patent Title: Current source circuit and semiconductor device
- Patent Title (中): 电流源电路和半导体器件
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Application No.: US13041069Application Date: 2011-03-04
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Publication No.: US08405451B2Publication Date: 2013-03-26
- Inventor: Ikuo Fukami
- Applicant: Ikuo Fukami
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-049009 20100305
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A current source circuit includes a reference current source circuit; a reference voltage source circuit generating a voltage proportional to a thermal voltage based on the reference current; a first transistor connected between the reference voltage source circuit and the second power supply voltage and through which a first current flows; a second transistor which has a gate applied with a voltage as a result of addition of the voltage generated by the reference voltage source circuit and a voltage between a source and a drain of the first transistor and through which a second current flows; a current source supplying a third current of a current value proportional to that of the first current; and a third transistor through which a difference current between the second current and the third current flows. An output current is supplied based on the difference current.
Public/Granted literature
- US20110215859A1 CURRENT SOURCE CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2011-09-08
Information query
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