Invention Grant
- Patent Title: CMOS image sensor with improved photodiode area allocation
- Patent Title (中): CMOS图像传感器具有改进的光电二极管面积分配
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Application No.: US12837870Application Date: 2010-07-16
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Publication No.: US08405748B2Publication Date: 2013-03-26
- Inventor: Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
- Applicant: Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04N3/14
- IPC: H04N3/14

Abstract:
Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
Public/Granted literature
- US20120013777A1 CMOS IMAGE SENSOR WITH IMPROVED PHOTODIODE AREA ALLOCATION Public/Granted day:2012-01-19
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