Invention Grant
- Patent Title: Deposition donor substrate and deposition method using the same
- Patent Title (中): 沉积施主衬底和使用其的沉积方法
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Application No.: US12431264Application Date: 2009-04-28
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Publication No.: US08405909B2Publication Date: 2013-03-26
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratories Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratories Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2008-123204 20080509
- Main IPC: G02B27/10
- IPC: G02B27/10

Abstract:
A lens array is formed on one surface of a deposition donor substrate and a light absorption layer is formed on the other surface; a material layer is formed in contact with the light absorption layer; the surface of the deposition donor substrate on which the material layer is formed and a deposition target surface of a deposition target substrate are disposed to face each other; and at least part of the light absorption layer is selectively irradiated with light from the side of the deposition donor substrate, on which the lens array is provided, to heat the material layer in a region overlapped by the region irradiated with the light in the light absorption layer, thereby performing deposition to the deposition target surface of the deposition target substrate.
Public/Granted literature
- US20090279179A1 DEPOSITION DONOR SUBSTRATE AND DEPOSITION METHOD USING THE SAME Public/Granted day:2009-11-12
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