Invention Grant
- Patent Title: Integrated circuit provided with a protection against electrostatic discharges
- Patent Title (中): 集成电路具有防静电保护功能
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Application No.: US13021904Application Date: 2011-02-07
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Publication No.: US08405942B2Publication Date: 2013-03-26
- Inventor: François Tailliet
- Applicant: François Tailliet
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR1050860 20100208
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
An integrated circuit protected against electrostatic discharges, having output pads coupled to amplification stages, each stage including, between first and second power supply rails, a P-channel MOS power transistor in series with an N-channel MOS power transistor, this integrated circuit further including protection circuitry for simultaneously turning on the two transistors when a positive overvoltage occurs between the first and second power supply rails.
Public/Granted literature
- US20110194219A1 INTEGRATED CIRCUIT PROVIDED WITH A PROTECTION AGAINST ELECTROSATATIC DISCHARGES Public/Granted day:2011-08-11
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