Invention Grant
US08405942B2 Integrated circuit provided with a protection against electrostatic discharges 有权
集成电路具有防静电保护功能

Integrated circuit provided with a protection against electrostatic discharges
Abstract:
An integrated circuit protected against electrostatic discharges, having output pads coupled to amplification stages, each stage including, between first and second power supply rails, a P-channel MOS power transistor in series with an N-channel MOS power transistor, this integrated circuit further including protection circuitry for simultaneously turning on the two transistors when a positive overvoltage occurs between the first and second power supply rails.
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