Invention Grant
US08406035B2 Nonvolatile memory device and method of writing data to nonvolatile memory device
有权
非易失性存储器件和将数据写入非易失性存储器件的方法
- Patent Title: Nonvolatile memory device and method of writing data to nonvolatile memory device
- Patent Title (中): 非易失性存储器件和将数据写入非易失性存储器件的方法
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Application No.: US13056925Application Date: 2010-05-14
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Publication No.: US08406035B2Publication Date: 2013-03-26
- Inventor: Yoshikazu Katoh , Shunsaku Muraoka , Takeshi Takagi
- Applicant: Yoshikazu Katoh , Shunsaku Muraoka , Takeshi Takagi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-117976 20090514
- International Application: PCT/JP2010/003264 WO 20100514
- International Announcement: WO2010/131477 WO 20101118
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A resistance variable layer has a characteristic in which the resistance variable layer changes to a second resistance state (RL) in such a manner that its resistance value stops decreasing when an interelectrode voltage reaches a first voltage (V1) which is a negative voltage, the resistance variable layer changes to a first resistance state (RH) in such a manner that its resistance value starts increasing when the interelectrode voltage reaches a second voltage (V2) which is a positive voltage which is equal in absolute value to the first voltage, the resistance variable layer changes to the first resistance state in such a manner that the resistance variable layer flows an interelectrode current such that the interelectrode voltage is maintained at a third voltage (V3) higher than the second voltage, when the interelectrode voltage reaches the third voltage, and the resistance variable layer changes to the first resistance state in such a manner that its resistance value stops increasing when the interelectrode current reaches a first current (Ilim) in a state where the interelectrode voltage is not lower than the second voltage and lower than the third voltage, and the load resistor has a characteristic in which when the electric pulse application device outputs an electric pulse of a second application voltage (VP2), a current flowing by applying to the load resistor, a voltage obtained by subtracting the third voltage from the second application voltage, is not higher than a first current value.
Public/Granted literature
- US20110128776A1 NONVOLATILE MEMORY DEVICE AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY DEVICE Public/Granted day:2011-06-02
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