Invention Grant
US08406040B2 Spin-torque based memory device using a magnesium oxide tunnel barrier
失效
基于旋转力矩的存储器件使用氧化镁隧道势垒
- Patent Title: Spin-torque based memory device using a magnesium oxide tunnel barrier
- Patent Title (中): 基于旋转力矩的存储器件使用氧化镁隧道势垒
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Application No.: US12684530Application Date: 2010-01-08
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Publication No.: US08406040B2Publication Date: 2013-03-26
- Inventor: Daniel C. Worledge , Guohan Hu , Jonathan Z. Sun
- Applicant: Daniel C. Worledge , Guohan Hu , Jonathan Z. Sun
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01F10/08
- IPC: H01F10/08 ; H01L43/08 ; G11B5/39
Abstract:
A magnetic tunnel junction stack including a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), a free magnetic layer adjacent to the tunnel barrier layer, and a layer of vanadium (V) adjacent to the free magnetic layer.
Public/Granted literature
- US20110171493A1 SPIN-TORQUE BASED MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNEL BARRIER Public/Granted day:2011-07-14
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